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| TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): O 5 * Peak wavelength: p = 875 nm * High reliability * Angle of half intensity: = 24 * Low forward voltage * Suitable for high pulse current operation 94 8389 * Good spectral matching with Si photodetectors * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS * Infrared remote control and free air data transmission systems with comfortable radiation angle * This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA6500 TSHA6501 TSHA6502 TSHA6503 Ie (mW/sr) 20 25 30 35 (deg) 24 24 24 24 P (nm) 875 875 875 875 tr (ns) 600 600 600 600 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSHA6500 TSHA6501 TSHA6502 TSHA6503 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-13/4 T-13/4 T-13/4 T-13/4 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 2.5 180 UNIT V mA mA A mW www.vishay.com 166 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 Rev. 1.7, 05-Sep-08 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT C C C C K/W 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKe p TKp tr tr tf tf d 20 - 0.7 24 875 80 0.2 600 300 600 300 2.2 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K A pF %/K deg nm nm nm/K ns ns ns ns mm Document Number: 81022 Rev. 1.7, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 167 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART TSHA6500 Forward voltage IF = 1.5 A, tp = 100 s TSHA6501 TSHA6502 TSHA6503 TSHA6500 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 s TSHA6501 TSHA6502 TSHA6503 TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHA6500 Radiant power IF = 100 mA, tp = 20 ms TSHA6501 TSHA6502 TSHA6503 Note Tamb = 25 C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie e e e e 12 16 20 24 150 200 250 300 MIN. TYP. 3.2 3.2 3.2 3.2 20 25 30 35 240 300 360 420 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 60 60 60 60 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 1 10 4 I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 IF - Forward Current (mA) IF - Forward Current (A) 10 3 tp = 100 s tp/T= 0.001 10 2 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 8005 0 1 2 3 4 94 8003 V F - Forward Voltage (V) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage www.vishay.com 168 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 Rev. 1.7, 05-Sep-08 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 I e rel; e rel I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8020 0 - 10 0 10 50 100 140 94 7990 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) e - Relative Radiant Power 1.25 TSHA 6503 TSHA 6502 1.0 100 0.75 0.5 TSHA 6501 10 TSHA 6500 1 100 0.25 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 0 780 880 - Wavelenght (nm) 980 94 8746 101 102 103 I F - Forward Current (mA) 104 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0 10 20 30 1000 I e rel - Relative Radiant Intensity e - Radiant Power (mW) 100 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 10 0 94 8015 e 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8016 e 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81022 Rev. 1.7, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 169 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters A C 5.8 0.15 0.15 R 2.49 (sphere) (4.4) 0.3 7.7 < 0.7 8.7 35.2 0.55 Area not plane 5 0.15 0.6 + 0.2 - 0.1 1.5 0.25 0.5 + 0.15 - 0.05 0.5 + 0.15 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5259.08-4 Issue: 2; 25.08.98 14436 www.vishay.com 170 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 Rev. 1.7, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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